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View Full Version : Will 2-D Tin be the Next Super Material? (New Single-Layer Material Could Go Beyond Graphene, Conducting Electricity with 100 Percent Efficiency at Room Temp.)



TargeT
27th November 2013, 15:03
Graphene is pretty amazing for it's multiple uses, but this... 100% efficiency at room temp is pretty amazing, the only quantum computer that exists now has to run at ultra low temps for it's super conductors to work... this could be an amazing discovery.


Will 2-D Tin be the Next Super Material?

Theorists Predict New Single-Layer Material Could Go Beyond Graphene, Conducting Electricity with 100 Percent Efficiency at Room Temperature
November 21, 2013
Menlo Park, Calif. — A single layer of tin atoms could be the world’s first material to conduct electricity with 100 percent efficiency at the temperatures that computer chips operate, according to a team of theoretical physicists led by researchers from the U.S. Department of Energy’s (DOE) SLAC National Accelerator Laboratory and Stanford University.

Researchers call the new material "stanene," combining the Latin name for tin (stannum) with the suffix used in graphene, another single-layer material whose novel electrical properties hold promise for a wide range of applications.

https://www6.slac.stanford.edu/sites/www6.slac.stanford.edu/files/styles/article-news-node-page/public/images/Stanene-TinCan.jpg?itok=P_24Jdjp
A single layer of tin – an element familiar as the coating for tin cans – could be the world’s first material to conduct electricity with 100 percent efficiency at the temperatures that computer chips operate. If used as wiring in computer chips, the material, called "stanene," could increase the speed and lower the power needs of future generations of computers.

"Stanene could increase the speed and lower the power needs of future generations of computer chips, if our prediction is confirmed by experiments that are underway in several laboratories around the world," said the team leader, Shoucheng Zhang, a physics professor at Stanford and the Stanford Institute for Materials and Energy Sciences (SIMES), a joint institute with SLAC. The team’s work was published recently in Physical Review Letters.

The Path to Stanene

For the past decade, Zhang and colleagues have been calculating and predicting the electronic properties of a special class of materials known as topological insulators, which conduct electricity only on their outside edges or surfaces and not through their interiors. When topological insulators are just one atom thick, their edges conduct electricity with 100 percent efficiency. These unusual properties result from complex interactions between the electrons and nuclei of heavy atoms in the materials.

“The magic of topological insulators is that by their very nature, they force electrons to move in defined lanes without any speed limit, like the German autobahn,” Zhang said. “As long as they’re on the freeway – the edges or surfaces – the electrons will travel without resistance.”

In 2006 and 2009, Zhang’s group predicted that mercury telluride and several combinations of bismuth, antimony, selenium and tellurium should be topological insulators, and they were soon proven right in experiments performed by others. But none of those materials is a perfect conductor of electricity at room temperature, limiting their potential for commercial applications.

Earlier this year, visiting scientist Yong Xu, who is now at Tsinghua University in Beijing, collaborated with Zhang’s group to consider the properties of a single layer of pure tin.

“We knew we should be looking at elements in the lower-right portion of the periodic table,” Xu said. “All previous topological insulators have involved the heavy and electron-rich elements located there.”

Their calculations indicated that a single layer of tin would be a topological insulator at and above room temperature, and that adding fluorine atoms to the tin would extend its operating range to at least 100 degrees Celsius (212 degrees Fahrenheit).

https://www6.slac.stanford.edu/sites/www6.slac.stanford.edu/files/styles/article-news-node-page/public/images/Stanene-Lattice.jpg?itok=dO3MxocT
Adding fluorine atoms (yellow) to a single layer of tin atoms (grey) should allow a predicted new material, stanene, to conduct electricity perfectly along its edges (blue and red arrows) at temperatures up to 100 degrees Celsius (212 Fahrenheit)

Ultimately a Substitute for Silicon?

Zhang said the first application for this stanene-fluorine combination could be in wiring that connects the many sections of a microprocessor, allowing electrons to flow as freely as cars on a highway. Traffic congestion would still occur at on- and off-ramps made of conventional conductors, he said. But stanene wiring should significantly reduce the power consumption and heat production of microprocessors.

Manufacturing challenges include ensuring that only a single layer of tin is deposited and keeping that single layer intact during high-temperature chip-making processes.

“Eventually, we can imagine stanene being used for many more circuit structures, including replacing silicon in the hearts of transistors,” Zhang said. “Someday we might even call this area Tin Valley rather than Silicon Valley.”

Additional contributors included researchers from Tsinghua University in Beijing and the Max Planck Institute for Chemical Physics of Solids in Dresden, Germany. The research was supported by the Mesodynamic Architectures program of the Defense Advanced Research Projects Agency.

SLAC is a multi-program laboratory exploring frontier questions in photon science, astrophysics, particle physics and accelerator research. Located in Menlo Park, California, SLAC is operated by Stanford University for the U.S. Department of Energy Office of Science. To learn more, please visit www.slac.stanford.edu.

The Stanford Institute for Materials and Energy Sciences (SIMES) is a joint institute of SLAC National Accelerator Laboratory and Stanford University. SIMES studies the nature, properties and synthesis of complex and novel materials in the effort to create clean, renewable energy technologies. For more information, please visit simes.slac.stanford.edu.

DOE’s Office of Science is the single largest supporter of basic research in the physical sciences in the United States, and is working to address some of the most pressing challenges of our time. For more information, please visit science.energy.gov.

https://www6.slac.stanford.edu/news/2013-11-21-tin-super-material-stanene.aspx

Bob
27th November 2013, 20:44
Great report there TargeT :)

Looking at the structure, I see a one atom thick layer, with side by side atoms, flat like a ribbon, and the edges they say are basically superconductive, or zero resistance. The diagram is of an "ideal" structure, the nano-ribbon basically floating in space.

In reality, for implementation onto a chip, a substrate the substance has to be in physical contact with other atoms. There is no indication so far in their research (Stanford) the substance that they coined "Stanene" will not cause the traveling "edge" electrons to not migrate into the surrounding support carrier, thereby defeating the 100% conductivity.

i.e. if the charges are no longer going just along the edges, they are going elsewhere, and "effective resistance" then shows up, by charge misdirection.

If there is an insulator on the side and bottom, such as if this were embedded inside a substrate (typically silicon or "boron nitride") the existing substrate materials, then there are potential charge locations for the electrons to additionally migrate into.

I think it's premature the predictions in the Stanford press release for those reasons.

Ideally stylized substance, very unique, is it practical in circuits? I would want to see the test results of actual stanene "wires" on the chips to see what the power loss is or isn't.

ED note: Adding some images showing what is "inside" the chips, how they are assembled to create functional "parts" in the substrate.. (Conduction paths for 100% zero resistance don't allow for the key switching items (transistors) where the thermal resistive losses happen)

http://ej.iop.org/images/0268-1242/16/11/310/Full/2607001.gif
the above is just 1 of the millions of pathways that have to be created in a working CPU device

http://i.dailymail.co.uk/i/pix/2012/11/22/article-2236994-1629D75B000005DC-999_964x838.jpg
Amtel CPU

Just saying, they have a long way to go to extrapolate a broad statement that such will make processors so much more efficient. There is a lot to change over, whole new sciences to deal with that. Great find, but gee, 25 years away maybe?